IAUC60N10S5L110ATMA1

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See Product Specifications

Mfr. #:

Mfr.:

Infineon Technologies

Описание:

MOSFET_(75V 120V( PG-TDSON-8

Упаковка:

Tape & Reel (TR)

Datasheet:

IAUC60N10S5L110ATMA1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	IAUC60N10S5L110ATMA1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Infineon Technologies
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	1551d0db07ff2a9a5117bf21afa2832a
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	cefba590d8f64410e8e9dc377aebe210
Vgs(th) (Max) @ Id:	2f9b61b8abcd84efbe5706e36a79634d
Gate Charge (Qg) (Max) @ Vgs:	87c5dfc91349ca0d054e4fbb8997c178
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	bde6dfeaec02e760dd34eb493cf07218
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	3d4ce2eff7febd30c0a1a40de8c1319b
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	5ce5b151ef886dc2457ccff137582173
Package / Case:	7f82de9f5c66f9f803bc2f6ee2b90c1b