IAUS300N08S5N011ATMA1

Images are for reference only
See Product Specifications

Mfr. #:

Mfr.:

Infineon Technologies

Описание:

MOSFET_(75V 120V( PG-HSOG-8

Упаковка:

Tape & Reel (TR)

Datasheet:

IAUS300N08S5N011ATMA1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	IAUS300N08S5N011ATMA1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Infineon Technologies
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	ebd7aaeec2792ddf9fe1af48370ec717
Current - Continuous Drain (Id) @ 25°C:	033f88d9c3bd1a473f5062da50f781fb
Drive Voltage (Max Rds On, Min Rds On):	9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:	43cf6fff7021ed18b5a618ba9e40bc28
Vgs(th) (Max) @ Id:	7a89f88395d03d8a64a495b442b1f713
Gate Charge (Qg) (Max) @ Vgs:	4db570a0604053a74b53b1ba6859a732
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	6f63433b66f91adac5a82cbdb67f4b70
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	925b824d4ea9a147ba322c6feb66115c
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	4b74d4abf2ad59efc2f19273ea5ab44e
Package / Case:	a976ee29126ce1a6bb3b65de97278f82