IAUS300N10S5N014ATMA1

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See Product Specifications

Mfr. #:

Mfr.:

Infineon Technologies

Описание:

MOSFET_(75V 120V( PG-HSOG-8

Упаковка:

Tape & Reel (TR)

Datasheet:

IAUS300N10S5N014ATMA1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	IAUS300N10S5N014ATMA1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Infineon Technologies
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	cee0f6c584b9040b4f9617c685058a3e
Drive Voltage (Max Rds On, Min Rds On):	9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:	a9cd801282a4a9843ce0bf6a354e29a0
Vgs(th) (Max) @ Id:	7a89f88395d03d8a64a495b442b1f713
Gate Charge (Qg) (Max) @ Vgs:	a601cfc3af885e289602efc226e90503
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	b16719b2db1f4a1d211dfe1d4e8ab10d
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	925b824d4ea9a147ba322c6feb66115c
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	4b74d4abf2ad59efc2f19273ea5ab44e
Package / Case:	a976ee29126ce1a6bb3b65de97278f82