IAUT150N10S5N035ATMA1

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See Product Specifications

Mfr. #:

Mfr.:

Infineon Technologies

Описание:

MOSFET N-CH 100V 150A 8HSOF

Упаковка:

Tape & Reel (TR)

Datasheet:

IAUT150N10S5N035ATMA1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	IAUT150N10S5N035ATMA1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Infineon Technologies
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	cb4e35d815c72bdb05e0db13b2827c5d
Drive Voltage (Max Rds On, Min Rds On):	9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:	cb34bd17588c698b86de74ab9c100e3a
Vgs(th) (Max) @ Id:	888d4d2e06a43d2d354fc2e5be30cd8d
Gate Charge (Qg) (Max) @ Vgs:	74a6448a896a88502ae078c451cdbfee
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	c6bf8085aa2a173f26c80aefc704a35e
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	021aecc8672de36a642769a3e0b7c00d
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	881308f1b46c6442e96cd6c906928591
Package / Case:	a976ee29126ce1a6bb3b65de97278f82