IAUT200N08S5N023ATMA1

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See Product Specifications

Mfr. #:

Mfr.:

Infineon Technologies

Описание:

MOSFET N-CH 80V 200A 8HSOF

Упаковка:

Tape & Reel (TR)

Datasheet:

IAUT200N08S5N023ATMA1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	IAUT200N08S5N023ATMA1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Infineon Technologies
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	ebd7aaeec2792ddf9fe1af48370ec717
Current - Continuous Drain (Id) @ 25°C:	c04561299890317337cf01a5b61198d6
Drive Voltage (Max Rds On, Min Rds On):	9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:	9da9abb3ad5a12f85a1a67f85c271d37
Vgs(th) (Max) @ Id:	8bd16f2cddab61d3d52999c4a48a33c5
Gate Charge (Qg) (Max) @ Vgs:	dd1e01f8f7a1df3b99f0374250edc868
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	51aa3810a5b3ca4ef2bab3ab7fe2c264
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	a8b3f64040b1225c2cc8b3728386572f
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	881308f1b46c6442e96cd6c906928591
Package / Case:	a976ee29126ce1a6bb3b65de97278f82