IAUT260N10S5N019ATMA1

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See Product Specifications

Mfr. #:

Mfr.:

Infineon Technologies

Описание:

MOSFET N-CH 100V 260A 8HSOF

Упаковка:

Tape & Reel (TR)

Datasheet:

IAUT260N10S5N019ATMA1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	IAUT260N10S5N019ATMA1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Infineon Technologies
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	f751ab723295a86d1178a7dab2ceabd1
Drive Voltage (Max Rds On, Min Rds On):	9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:	28650b7bdbc0e4e28c2101b96acfe572
Vgs(th) (Max) @ Id:	7ff87e962c4961b66b46ca69ad71e271
Gate Charge (Qg) (Max) @ Vgs:	bd3a9bac0b8286ac3091b1b5d92ccbab
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	84d74e1e7da87a3f6a67f9d08a7ac611
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	ac1760e6638f8a136f249122761ef823
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	881308f1b46c6442e96cd6c906928591
Package / Case:	a976ee29126ce1a6bb3b65de97278f82