IAUZ40N06S5N105ATMA1

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See Product Specifications

Mfr. #:

Mfr.:

Infineon Technologies

Описание:

MOSFET_)40V 60V) PG-TSDSON-8

Упаковка:

Tape & Reel (TR)

Datasheet:

IAUZ40N06S5N105ATMA1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	IAUZ40N06S5N105ATMA1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Infineon Technologies
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	696c5849f70496d6f377833b5fe2d68b
Drive Voltage (Max Rds On, Min Rds On):	0b6ab86230b092822a85075e85bfbb5a
Rds On (Max) @ Id, Vgs:	9c28f189cdb89eee2a4abdc1bee11da1
Vgs(th) (Max) @ Id:	7fcee2900c7b663818aafea9817b8255
Gate Charge (Qg) (Max) @ Vgs:	81a2e9a98ec1e58147ae12276ccf842b
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	8f7d6e865ae3386a537600c4db7d823c
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	0c6019a9db9912572c44701aada80fd8
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	b33c66258f3917bf0e5bdf0d5f793b89
Package / Case:	7f82de9f5c66f9f803bc2f6ee2b90c1b