IMBG120R350M1HXTMA1

IMBG120R350M1HXTMA1

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IMBG120R350M1HXTMA1
Описание:
SICFET N-CH 1.2KV 4.7A TO263
Упаковка:
Tape & Reel (TR)
Datasheet:
IMBG120R350M1HXTMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IMBG120R350M1HXTMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:ed9a2411b032b5ad765b9d5f6b1bc8e1
Drain to Source Voltage (Vdss):edca1d2343e4e5615ce51a879f622a76
Current - Continuous Drain (Id) @ 25°C:bef931f859d79acb0cf04301f1ac90c0
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:416cccefbd77dbfd68eb4a68c82772ba
Vgs(th) (Max) @ Id:2ba925994f9067316be2cae598611396
Gate Charge (Qg) (Max) @ Vgs:40248fc8804a42a2326397e8e4e69d2a
Vgs (Max):228c26441d7419e47ecb8f5c9576871f
Input Capacitance (Ciss) (Max) @ Vds:e7ff3720345cbd426cffa80e249fb4e0
FET Feature:eb6d8ae6f20283755b339c0dc273988b
Power Dissipation (Max):9a89cc95043fae4e2135b24e293ac5c9
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:31124659feb1ea4e2fd5d212a71487a5
Package / Case:f0141ac7a209283a1eeaae764566c410
In Stock: 0
Stock:
0 Can Ship Immediately
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