IMW120R020M1HXKSA1

IMW120R020M1HXKSA1

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IMW120R020M1HXKSA1
Описание:
SIC DISCRETE
Упаковка:
Tube
Datasheet:
IMW120R020M1HXKSA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IMW120R020M1HXKSA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:ed9a2411b032b5ad765b9d5f6b1bc8e1
Drain to Source Voltage (Vdss):edca1d2343e4e5615ce51a879f622a76
Current - Continuous Drain (Id) @ 25°C:c0181419f4ae7c56e22609fb9aa34317
Drive Voltage (Max Rds On, Min Rds On):c6abd722d64c7fb19cac6ae79691b7e7
Rds On (Max) @ Id, Vgs:45ce4272996dead40d6ea1fb41eca683
Vgs(th) (Max) @ Id:81494c21a7747d8b001f8e114808c955
Gate Charge (Qg) (Max) @ Vgs:18aa404e0b23b5387c808c40ce240e5b
Vgs (Max):17dbbf8af49358ff691373220e394225
Input Capacitance (Ciss) (Max) @ Vds:8fea9910346bba9e7eb6a2399c8e5924
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):925b824d4ea9a147ba322c6feb66115c
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:6b24355f801babc1549460e66a042e0b
Package / Case:748a8539a6c3c7dbdb455218c72fac40
In Stock: 0
Stock:
0 Can Ship Immediately
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