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See Product Specifications
| номер части: | IMW65R083M1HXKSA1 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Infineon Technologies |
| Упаковка: | Tube |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | ed9a2411b032b5ad765b9d5f6b1bc8e1 |
| Drain to Source Voltage (Vdss): | 347f255197950e6b02089b73b6a8acdd |
| Current - Continuous Drain (Id) @ 25°C: | 0c4305b7a2c4450b64b22399f0cdda6c |
| Drive Voltage (Max Rds On, Min Rds On): | 4fe830fc54951fe85de6fed766954259 |
| Rds On (Max) @ Id, Vgs: | f29ed128d2dbffc6533c2a1ae103cb44 |
| Vgs(th) (Max) @ Id: | 5714fd1b0a3294d62b6c2d06c8b538a7 |
| Gate Charge (Qg) (Max) @ Vgs: | 18eff4b9d3180fbffcce62cc4c341ae5 |
| Vgs (Max): | ce6e022cb46fb9842012492ce3c7f5cb |
| Input Capacitance (Ciss) (Max) @ Vds: | 74d36848edccb425b22361f8ab96a78e |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 9911ad4440d4c4ad12abf0c7ff0a94ad |
| Operating Temperature: | 57d4d9eedc2deb0e981150db4dec7a0a |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Supplier Device Package: | 94db0f826d433e889cdfd6495a3b9fde |
| Package / Case: | 748a8539a6c3c7dbdb455218c72fac40 |
