IMZA65R083M1HXKSA1

IMZA65R083M1HXKSA1

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See Product Specifications

IMZA65R083M1HXKSA1
Описание:
SILICON CARBIDE MOSFET, PG-TO247
Упаковка:
Tube
Datasheet:
IMZA65R083M1HXKSA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IMZA65R083M1HXKSA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:ed9a2411b032b5ad765b9d5f6b1bc8e1
Drain to Source Voltage (Vdss):347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:dce9223ecf68e5b07524c4e0fc03ea4d
Drive Voltage (Max Rds On, Min Rds On):4fe830fc54951fe85de6fed766954259
Rds On (Max) @ Id, Vgs:f29ed128d2dbffc6533c2a1ae103cb44
Vgs(th) (Max) @ Id:5714fd1b0a3294d62b6c2d06c8b538a7
Gate Charge (Qg) (Max) @ Vgs:18eff4b9d3180fbffcce62cc4c341ae5
Vgs (Max):ce6e022cb46fb9842012492ce3c7f5cb
Input Capacitance (Ciss) (Max) @ Vds:74d36848edccb425b22361f8ab96a78e
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):9911ad4440d4c4ad12abf0c7ff0a94ad
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:4b36ebd5a2407ab6eaa7be4e1f03eac4
Package / Case:f1f05fa7d6a97ae451c8efbfb2831dfa
In Stock: 172
Stock:
172 Can Ship Immediately
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