IPAN60R125PFD7SXKSA1

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See Product Specifications

Mfr. #:

Mfr.:

Infineon Technologies

Описание:

MOSFET N-CH 650V 25A TO220

Упаковка:

Tube

Datasheet:

IPAN60R125PFD7SXKSA1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	IPAN60R125PFD7SXKSA1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Infineon Technologies
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:	b306e492b5613991dbec23798b691a05
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	fd89637bfb472a5bb68b7fc488f66efb
Vgs(th) (Max) @ Id:	31662132ebeb05f24fe3c7f3279195d6
Gate Charge (Qg) (Max) @ Vgs:	95e0121b2594331d2019c4eaadbc1cae
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	582a5108eb7eb530faae8a301c4160b1
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	406dba73f1f3ca19a0e34dad722968b9
Operating Temperature:	2bfdfc036647708637c6c2b106628aeb
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	369db00bd01ff801b846bf460e34ec2d
Package / Case:	a02e0d1a928de3366340ceae094aecd8