IPAN60R360PFD7SXKSA1

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See Product Specifications

Mfr. #:

Mfr.:

Infineon Technologies

Описание:

MOSFET N-CH 650V 10A TO220

Упаковка:

Tube

Datasheet:

IPAN60R360PFD7SXKSA1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	IPAN60R360PFD7SXKSA1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Infineon Technologies
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:	4cbc835c709aa2e29cefbdf46fa4c9f1
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	72f59f69c8e89eb386dd2647196a4257
Vgs(th) (Max) @ Id:	0e4b27e923017172ac085d0daa00f13e
Gate Charge (Qg) (Max) @ Vgs:	6e10d8f14332454f55f6e680371c22a5
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	36d722c10cd31e810e9aeb29bbeb8301
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	bfad39caa7b8b1823dc0b8308a2c0d14
Operating Temperature:	2bfdfc036647708637c6c2b106628aeb
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	369db00bd01ff801b846bf460e34ec2d
Package / Case:	a02e0d1a928de3366340ceae094aecd8