IPB020N10N5LFATMA1

IPB020N10N5LFATMA1

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IPB020N10N5LFATMA1
Описание:
MOSFET N-CH 100V 120A TO263-3
Упаковка:
Tape & Reel (TR)
Datasheet:
IPB020N10N5LFATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPB020N10N5LFATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:b1be509671d214bd598752c2a709fdac
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:c0e82a4c9c01ce4289f644b1b1e0530b
Vgs(th) (Max) @ Id:ceabf78964088d481960833583d95c4a
Gate Charge (Qg) (Max) @ Vgs:987dff12076466a867c6670a9ab1aa9b
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:a46d7213d4567ae831895045463a46ca
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):98bca11be491fc86c63d6889ed7ef9d6
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:fa3aee1f7ec3f3747a89416bed6c07d9
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 0
Stock:
0 Can Ship Immediately
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