IPB024N10N5ATMA1

IPB024N10N5ATMA1

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IPB024N10N5ATMA1
Описание:
MOSFET N-CH 100V 180A TO263-7
Упаковка:
Tape & Reel (TR)
Datasheet:
IPB024N10N5ATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPB024N10N5ATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:699c7cbda38c65c37939fef53951f120
Drive Voltage (Max Rds On, Min Rds On):9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:229d910d89d2dfe7091924b6727abbdc
Vgs(th) (Max) @ Id:2e9f4f2625404585cf8b171d11593a48
Gate Charge (Qg) (Max) @ Vgs:ff3e7fbec4e0f5f17155da8f90fd6534
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:f83df737349a38ed714e3d6de24ac223
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):2f8fb1b958a63c9c2907182cbf2e2287
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:568c5ec0e360f55d74cc91eccdadf5b1
Package / Case:f0141ac7a209283a1eeaae764566c410
In Stock: 0
Stock:
0 Can Ship Immediately
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