IPB027N10N5ATMA1

IPB027N10N5ATMA1

Images are for reference only
See Product Specifications

IPB027N10N5ATMA1
Описание:
MOSFET N-CH 100V 120A D2PAK
Упаковка:
Tape & Reel (TR)
Datasheet:
IPB027N10N5ATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPB027N10N5ATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:b1be509671d214bd598752c2a709fdac
Drive Voltage (Max Rds On, Min Rds On):9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:8957c11a86e839ef51c234dff76bcfb4
Vgs(th) (Max) @ Id:ad9e57bd38366738a5b8dc6000c952ee
Gate Charge (Qg) (Max) @ Vgs:901400b28126feb73c50c091998c2c6f
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:d60f662ac18938a33e395f134e1cd060
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):2f8fb1b958a63c9c2907182cbf2e2287
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:fa3aee1f7ec3f3747a89416bed6c07d9
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
EPC2036
EPC2036
EPC
GANFET N-CH 100V 1.7A DIE
HUF75309P3
HUF75309P3
Fairchild Semiconductor
MOSFET N-CH 55V 19A TO220-3
G30N03D3
G30N03D3
Goford Semiconductor
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
CSD25211W1015
CSD25211W1015
Texas Instruments
MOSFET P-CH 20V 3.2A 6DSBGA
AIMW120R035M1HXKSA1
AIMW120R035M1HXKSA1
Infineon Technologies
1200V COOLSIC MOSFET PG-TO247-3
FDS4141
FDS4141
onsemi
MOSFET P-CH 40V 10.8A 8SOIC
IRF730BPBF
IRF730BPBF
Vishay Siliconix
MOSFET N-CH 400V 6A TO220AB
SI5433BDC-T1-E3
SI5433BDC-T1-E3
Vishay Siliconix
MOSFET P-CH 20V 4.8A 1206-8
APTM100DA40T1G
APTM100DA40T1G
Microsemi Corporation
MOSFET N-CH 1000V 20A SP1
STP8N65M5
STP8N65M5
STMicroelectronics
MOSFET N-CH 650V 7A TO220-3
DMJ70H1D0SV3
DMJ70H1D0SV3
Diodes Incorporated
MOSFET N-CHANNEL 700V 6A TO251
RS3L045GNGZETB
RS3L045GNGZETB
Rohm Semiconductor
MOSFET N-CH 60V 4.5A 8SOP
Вас также может заинтересовать
BCR553E6327HTSA1
BCR553E6327HTSA1
Infineon Technologies
TRANS PREBIAS PNP 300MW SOT23-3
IMZ120R030M1HXKSA1
IMZ120R030M1HXKSA1
Infineon Technologies
SICFET N-CH 1.2KV 56A TO247-4
IPA60R950C6XKSA1
IPA60R950C6XKSA1
Infineon Technologies
MOSFET N-CH 600V 4.4A TO220-FP
IMW120R045M1XKSA1
IMW120R045M1XKSA1
Infineon Technologies
SICFET N-CH 1.2KV 52A TO247-3
SPB21N10 G
SPB21N10 G
Infineon Technologies
MOSFET N-CH 100V 21A TO263-3
IHW30N120R5XKSA1
IHW30N120R5XKSA1
Infineon Technologies
HOME APPLIANCES 14
IRG4PH20K
IRG4PH20K
Infineon Technologies
IGBT 1200V 11A 60W TO247AC
BTT62001ENAXUMA1
BTT62001ENAXUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TDSO-8
CY25814SXCT
CY25814SXCT
Infineon Technologies
IC CLOCK GEN 3.3V SS 8-SOIC
MB96F346RSBPQC-GSE2
MB96F346RSBPQC-GSE2
Infineon Technologies
IC MCU 16BIT 288KB FLASH 100PQFP
CY7C1021DV33-10VXIT
CY7C1021DV33-10VXIT
Infineon Technologies
IC SRAM 1MBIT PARALLEL 44SOJ
CY62157G30-45BVXI
CY62157G30-45BVXI
Infineon Technologies
IC SRAM 8MBIT PARALLEL 48VFBGA