IPB029N06N3GE8187ATMA1

IPB029N06N3GE8187ATMA1

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IPB029N06N3GE8187ATMA1
Описание:
MOSFET N-CH 60V 120A D2PAK
Упаковка:
Tape & Reel (TR)
Datasheet:
IPB029N06N3GE8187ATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPB029N06N3GE8187ATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:b1be509671d214bd598752c2a709fdac
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:9f370ff1fef94a2bd0376c1223029f55
Vgs(th) (Max) @ Id:0beae76c5c0102c78b3eee1efc093fa6
Gate Charge (Qg) (Max) @ Vgs:70cf671455c4c13d652d5d618b52b77a
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:c418a76b54a5a98317dd235533e3ece5
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):64bb138b078a8c7996f04ae426c1050b
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:fa3aee1f7ec3f3747a89416bed6c07d9
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 0
Stock:
0 Can Ship Immediately
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