IPB033N10N5LFATMA1

IPB033N10N5LFATMA1

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IPB033N10N5LFATMA1
Описание:
MOSFET N-CH 100V 120A TO263-3
Упаковка:
Tape & Reel (TR)
Datasheet:
IPB033N10N5LFATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPB033N10N5LFATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:b1be509671d214bd598752c2a709fdac
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:b0854332ea925e4b50dc0e52182f70fe
Vgs(th) (Max) @ Id:d6f19a70f92865b60d995d90afe451c2
Gate Charge (Qg) (Max) @ Vgs:6ff8ff0c67762f7e5439e208394b1efb
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:6246bf3567ba083e1e832b79820b5b00
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):56fc246452e0fb2c9401254c57f3ae05
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:fa3aee1f7ec3f3747a89416bed6c07d9
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 0
Stock:
0 Can Ship Immediately
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