IPB065N15N3GE8187ATMA1

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See Product Specifications

Mfr. #:

Mfr.:

Infineon Technologies

Описание:

MOSFET N-CH 150V 130A TO263-7

Упаковка:

Tape & Reel (TR)

Datasheet:

IPB065N15N3GE8187ATMA1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	IPB065N15N3GE8187ATMA1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Infineon Technologies
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	f5857b5c2d0b94d156ab7cc94df182c6
Current - Continuous Drain (Id) @ 25°C:	a3e2205c35eb227cb96aec611a69458d
Drive Voltage (Max Rds On, Min Rds On):	653feb5060f5a70357bbf918bdf8b794
Rds On (Max) @ Id, Vgs:	536208e799ba6a516d3377896abd2b63
Vgs(th) (Max) @ Id:	c5fb1b8ca0be61c0d2478bdd62d35640
Gate Charge (Qg) (Max) @ Vgs:	e3fca9908725a53619159586219e03be
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	b33262949822d99cf5893d64203314fa
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	ac1760e6638f8a136f249122761ef823
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	568c5ec0e360f55d74cc91eccdadf5b1
Package / Case:	51d69279f96728da2ba75fa31467039b