IPB067N08N3GATMA1

IPB067N08N3GATMA1

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IPB067N08N3GATMA1
Описание:
MOSFET N-CH 80V 80A D2PAK
Упаковка:
Tape & Reel (TR)
Datasheet:
IPB067N08N3GATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPB067N08N3GATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):ebd7aaeec2792ddf9fe1af48370ec717
Current - Continuous Drain (Id) @ 25°C:f62bcea93691757a98ebc71a7b6990f8
Drive Voltage (Max Rds On, Min Rds On):9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:63fffece2a30d67ac4233aec3934f9a1
Vgs(th) (Max) @ Id:17f782c7c65280c92b5921c806c35cf4
Gate Charge (Qg) (Max) @ Vgs:ec7ed06369aef779c1b881719a9ae5ce
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:c2f4d0dbf96047b8433bc613228ccca6
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):35f3eecaa3bd22ad34ab7c60509c09d1
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:fa3aee1f7ec3f3747a89416bed6c07d9
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 0
Stock:
0 Can Ship Immediately
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