IPB080N06N G

IPB080N06N G

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IPB080N06N G
Описание:
MOSFET N-CH 60V 80A TO263-3
Упаковка:
Tape & Reel (TR)
Datasheet:
IPB080N06N G Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPB080N06N G
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:f62bcea93691757a98ebc71a7b6990f8
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:59701fbb9607fd9a7aac15a7580ce3c0
Vgs(th) (Max) @ Id:f9d11737baedaa1bfb6b7948f92ddd3d
Gate Charge (Qg) (Max) @ Vgs:e3fca9908725a53619159586219e03be
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:fbeac6aa813a9c3a6d3e970b7651614e
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):d24b23e6e04addec493b6af801a99459
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:afb9c15c17fc8949a6d324bf8af9be28
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 14
Stock:
14 Can Ship Immediately
  • Делиться:
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