IPB085N06L G

IPB085N06L G

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IPB085N06L G
Описание:
MOSFET N-CH 60V 80A TO-263
Упаковка:
Cut Tape (CT)
Datasheet:
IPB085N06L G Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPB085N06L G
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Cut Tape (CT)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:f62bcea93691757a98ebc71a7b6990f8
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:5c1f51e08df7699a0396a12315dacdea
Vgs(th) (Max) @ Id:f824be8c3acd45b0fb549f36a09a6602
Gate Charge (Qg) (Max) @ Vgs:d9dcc8e55169cd7dc53469a54d88c070
Vgs (Max):336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:fbeac6aa813a9c3a6d3e970b7651614e
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:336d5ebc5436534e61d16e63ddfca327
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:afb9c15c17fc8949a6d324bf8af9be28
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 0
Stock:
0 Can Ship Immediately
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