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See Product Specifications
| номер части: | IPB08CN10N G |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Infineon Technologies |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 227b5c7c7a2ed2ea3da210ed0860030d |
| Current - Continuous Drain (Id) @ 25°C: | c25c400314a78e900d3a33a85b69e35d |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | b65e14a831dd9076956337841094e358 |
| Vgs(th) (Max) @ Id: | 9539428f6b997f8ee77a68dbb22f0384 |
| Gate Charge (Qg) (Max) @ Vgs: | f1e9e5f5ca4554397dea1bfdf1aa69c6 |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | fd24734b3bb211b0ee5d3cc304ee1588 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 0a5d5528eeabf2386035a4e8c1f9365c |
| Operating Temperature: | 57d4d9eedc2deb0e981150db4dec7a0a |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | fa3aee1f7ec3f3747a89416bed6c07d9 |
| Package / Case: | 99446f4470b43888d0c78d7d2cdfc956 |
