IPB093N04LGATMA1

IPB093N04LGATMA1

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IPB093N04LGATMA1
Описание:
MOSFET N-CH 40V 50A D2PAK
Упаковка:
Tape & Reel (TR)
Datasheet:
IPB093N04LGATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPB093N04LGATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):628cbc3e45d5bacb32414a526acf56ef
Current - Continuous Drain (Id) @ 25°C:de6fb719240c75cb73005d80d2170f88
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:9df49d6defba5b821d14193fbca5c4eb
Vgs(th) (Max) @ Id:675adb10ca79be9eb9367980b67f6396
Gate Charge (Qg) (Max) @ Vgs:bc6ff13a46b13779fa5c2c7eaad150e9
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:86e4a63a1da02ac6cc6d5b51376befe7
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):1b00be064f312236ac8e397b850a5a63
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:fa3aee1f7ec3f3747a89416bed6c07d9
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 0
Stock:
0 Can Ship Immediately
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