IPB096N03LGATMA1

IPB096N03LGATMA1

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IPB096N03LGATMA1
Описание:
MOSFET N-CH 30V 35A D2PAK
Упаковка:
Tape & Reel (TR)
Datasheet:
IPB096N03LGATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPB096N03LGATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:822fa9074467f53dd633c6786e269596
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:87df16405f55131fb947a5e2634bddbe
Vgs(th) (Max) @ Id:17ed95a87d7b17ee9a8302d07765c7da
Gate Charge (Qg) (Max) @ Vgs:b8a0640fe9525616e9f66bccd7456bd2
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:036f960bb42cbbd1ba66409905ab9dcc
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):0c6019a9db9912572c44701aada80fd8
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:fa3aee1f7ec3f3747a89416bed6c07d9
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 0
Stock:
0 Can Ship Immediately
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