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See Product Specifications
| номер части: | IPB100N04S4H2ATMA1 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Infineon Technologies |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 628cbc3e45d5bacb32414a526acf56ef |
| Current - Continuous Drain (Id) @ 25°C: | 4cd988b83fc990b9e8358853bdd4f330 |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | b80656b9e9060a1e7e26756d7bbf64b6 |
| Vgs(th) (Max) @ Id: | d8d431b4c3928e58bc90e6c94c20db44 |
| Gate Charge (Qg) (Max) @ Vgs: | 023f224d6b8afb36d9df8bc446b12e5a |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | e979c15ce12c359834137a97a9384faa |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 2f0dfb9b1afa235644c7d5c22c4b2fd4 |
| Operating Temperature: | 57d4d9eedc2deb0e981150db4dec7a0a |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | afb9c15c17fc8949a6d324bf8af9be28 |
| Package / Case: | 99446f4470b43888d0c78d7d2cdfc956 |
