IPB120N08S403ATMA1

IPB120N08S403ATMA1

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IPB120N08S403ATMA1
Описание:
MOSFET N-CH 80V 120A TO263-3
Упаковка:
Tape & Reel (TR)
Datasheet:
IPB120N08S403ATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPB120N08S403ATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):ebd7aaeec2792ddf9fe1af48370ec717
Current - Continuous Drain (Id) @ 25°C:b1be509671d214bd598752c2a709fdac
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:ea7ffc3e728f002840287e3f7bd0c7ba
Vgs(th) (Max) @ Id:fae924830448fc1dfe25e15ba4eddd3c
Gate Charge (Qg) (Max) @ Vgs:b5807a3baa15b639e30632be7c16acf9
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:ee7ae831926b7245d6ca5dcc5dc793d3
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):98fe293bad73f8f9d10b4fdf04da54d4
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:afb9c15c17fc8949a6d324bf8af9be28
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 0
Stock:
0 Can Ship Immediately
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