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See Product Specifications
| номер части: | IPB160N04S3H2ATMA1 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Infineon Technologies |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | a98c7ec8106cf16aced8afc464bc6bdf |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 628cbc3e45d5bacb32414a526acf56ef |
| Current - Continuous Drain (Id) @ 25°C: | 75a5ad36ce0e8ed0771777e5b487a394 |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | 8f37b62b605b4031aa3f275a2f2c0550 |
| Vgs(th) (Max) @ Id: | f9d11737baedaa1bfb6b7948f92ddd3d |
| Gate Charge (Qg) (Max) @ Vgs: | 11f26196644dcfd31829d0d0b6efff3f |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 43a7de94ec7eb9b45811dd5c02d5c451 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | d24b23e6e04addec493b6af801a99459 |
| Operating Temperature: | 57d4d9eedc2deb0e981150db4dec7a0a |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 05c00a236095730b824f0b4f51480f86 |
| Package / Case: | 51d69279f96728da2ba75fa31467039b |
