IPB160N08S4-03ATMA1

IPB160N08S4-03ATMA1

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IPB160N08S4-03ATMA1
Описание:
N-CHANNEL POWER MOSFET
Упаковка:
Bulk
Datasheet:
IPB160N08S4-03ATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPB160N08S4-03ATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):ebd7aaeec2792ddf9fe1af48370ec717
Current - Continuous Drain (Id) @ 25°C:75a5ad36ce0e8ed0771777e5b487a394
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:9f370ff1fef94a2bd0376c1223029f55
Vgs(th) (Max) @ Id:f9d11737baedaa1bfb6b7948f92ddd3d
Gate Charge (Qg) (Max) @ Vgs:b86831586521f8a8b9436b2a14bfc587
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:a2da005d91d947e5cf5d72c3747f9a5f
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):ae6827e9bf6146235586a6342624c5af
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:05c00a236095730b824f0b4f51480f86
Package / Case:51d69279f96728da2ba75fa31467039b
In Stock: 0
Stock:
0 Can Ship Immediately
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