IPB180N03S4LH0ATMA1

IPB180N03S4LH0ATMA1

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IPB180N03S4LH0ATMA1
Описание:
MOSFET N-CH 30V 180A TO263-7
Упаковка:
Tape & Reel (TR)
Datasheet:
IPB180N03S4LH0ATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPB180N03S4LH0ATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:699c7cbda38c65c37939fef53951f120
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:bc668314e3df9eebface2d6fed8ae56c
Vgs(th) (Max) @ Id:ff269a9e0a652828b4cb02e781237af3
Gate Charge (Qg) (Max) @ Vgs:8ed1cd6c943ab1d5bedc44416252abf5
Vgs (Max):7e789298058bfb7cfeeb61a9dcda2972
Input Capacitance (Ciss) (Max) @ Vds:a510261637b6a832284b15e9aef80257
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):2f8fb1b958a63c9c2907182cbf2e2287
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:05c00a236095730b824f0b4f51480f86
Package / Case:51d69279f96728da2ba75fa31467039b
In Stock: 0
Stock:
0 Can Ship Immediately
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