IPB200N25N3GATMA1

IPB200N25N3GATMA1

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IPB200N25N3GATMA1
Описание:
MOSFET N-CH 250V 64A D2PAK
Упаковка:
Tape & Reel (TR)
Datasheet:
IPB200N25N3GATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPB200N25N3GATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):c5cbb7b66561ae3dbbdcebae7b0fa3f9
Current - Continuous Drain (Id) @ 25°C:3abbfab01ce598b4c0f5ede8a0a0ef12
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:50f31020f63400dc05f0720ae9758f7d
Vgs(th) (Max) @ Id:c5fb1b8ca0be61c0d2478bdd62d35640
Gate Charge (Qg) (Max) @ Vgs:d044678719314f1a9ba4624d7a76c577
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:11c68fd3589a33e4f2ec304ac25b58d2
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):ac1760e6638f8a136f249122761ef823
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:fa3aee1f7ec3f3747a89416bed6c07d9
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 5
Stock:
5 Can Ship Immediately
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