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See Product Specifications
| номер части: | IPB26CN10NGATMA1 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Infineon Technologies |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 227b5c7c7a2ed2ea3da210ed0860030d |
| Current - Continuous Drain (Id) @ 25°C: | 822fa9074467f53dd633c6786e269596 |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | d614b55d02d4023f8f7e6956ad2ceb54 |
| Vgs(th) (Max) @ Id: | c3b4f3861cca3bb4046d61c1aa4977da |
| Gate Charge (Qg) (Max) @ Vgs: | bb76162d41a5892918594518b268849a |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 0546dccfaf1f96ba2c024884a1c5ef5b |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 646fdcffaf4624904148286cf1e37825 |
| Operating Temperature: | 57d4d9eedc2deb0e981150db4dec7a0a |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | fa3aee1f7ec3f3747a89416bed6c07d9 |
| Package / Case: | 99446f4470b43888d0c78d7d2cdfc956 |
