IPB60R120C7ATMA1

IPB60R120C7ATMA1

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IPB60R120C7ATMA1
Описание:
MOSFET N-CH 650V 19A TO263-3
Упаковка:
Tape & Reel (TR)
Datasheet:
IPB60R120C7ATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPB60R120C7ATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:e3fe61ca673c7f6244b5afed2c50e339
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:e6f589e3a82d7d0dc2d3f28dc06d4936
Vgs(th) (Max) @ Id:3573d1e3d1dfdfcb34e4eb2411c8638b
Gate Charge (Qg) (Max) @ Vgs:80219777f4f5034255c6ec22dd89c0f5
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:c6cf6110556579dc63bd089399f7dd5a
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):65d6d4dccdd16316c22f9523c785273e
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:afb9c15c17fc8949a6d324bf8af9be28
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 3104
Stock:
3104 Can Ship Immediately
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