IPB60R120P7ATMA1

IPB60R120P7ATMA1

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IPB60R120P7ATMA1
Описание:
MOSFET N-CH 650V 26A D2PAK
Упаковка:
Tape & Reel (TR)
Datasheet:
IPB60R120P7ATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPB60R120P7ATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:dce9223ecf68e5b07524c4e0fc03ea4d
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:d854704a74dfcd604a23295616065f94
Vgs(th) (Max) @ Id:1300f6f7e2c0e59a3838b872aaf5df5a
Gate Charge (Qg) (Max) @ Vgs:95e0121b2594331d2019c4eaadbc1cae
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:255754c00bf5ad6bbca63dbf9fe3f998
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):0e12d3c451e3fd009975a0bda04dde7f
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:fa3aee1f7ec3f3747a89416bed6c07d9
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 0
Stock:
0 Can Ship Immediately
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