IPB60R180P7ATMA1

IPB60R180P7ATMA1

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IPB60R180P7ATMA1
Описание:
MOSFET N-CH 600V 18A D2PAK
Упаковка:
Tape & Reel (TR)
Datasheet:
IPB60R180P7ATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPB60R180P7ATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:066e0bb89d610303369c0ca2b47f7252
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:fc13eac953276f46485bb90df2624c3b
Vgs(th) (Max) @ Id:ab25bb5594fbd0457a25de154a00a0f9
Gate Charge (Qg) (Max) @ Vgs:de0812168e822f1110815fd33f6452ea
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:d4cdd14cac94846f016f770e98b67db9
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):f01744b206dcc2ff656abffeb58f0284
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:fa3aee1f7ec3f3747a89416bed6c07d9
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 0
Stock:
0 Can Ship Immediately
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