IPB60R190C6ATMA1

IPB60R190C6ATMA1

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IPB60R190C6ATMA1
Описание:
MOSFET N-CH 600V 20.2A D2PAK
Упаковка:
Tape & Reel (TR)
Datasheet:
IPB60R190C6ATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPB60R190C6ATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:a98c7ec8106cf16aced8afc464bc6bdf
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:70832f3c1c13eed642f1954a89cf0e4c
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:df993a600da1f398a7c0784757fe337f
Vgs(th) (Max) @ Id:763e3ac2d31d139fa4cd7f6184d539db
Gate Charge (Qg) (Max) @ Vgs:e77b22e74cd8fa447a03234c39f9e501
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:a1498137f5e7481f24aea29db1de0c67
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):0407b3830b0487d57b9be5a02a067750
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:fa3aee1f7ec3f3747a89416bed6c07d9
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 3000
Stock:
3000 Can Ship Immediately
  • Делиться:
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