IPB65R190C7ATMA2

IPB65R190C7ATMA2

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IPB65R190C7ATMA2
Описание:
MOSFET N-CH 650V 13A TO263-3
Упаковка:
Tape & Reel (TR)
Datasheet:
IPB65R190C7ATMA2 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPB65R190C7ATMA2
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:5cd0f41eb076c80bc91cb5a6ee59fcd6
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:fe07742815c0d27f1dbe75de8eac70ca
Vgs(th) (Max) @ Id:bba073ae0006a53a2ab4a61d83249af9
Gate Charge (Qg) (Max) @ Vgs:972213b4ff98b73fb67879667322f035
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:2efac9a52ebde18c41bdffe54b73008a
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):f01744b206dcc2ff656abffeb58f0284
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:fa3aee1f7ec3f3747a89416bed6c07d9
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 0
Stock:
0 Can Ship Immediately
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Для использования с
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