IPB80N03S4L-03ATMA1

IPB80N03S4L-03ATMA1

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IPB80N03S4L-03ATMA1
Описание:
N-CHANNEL POWER MOSFET
Упаковка:
Bulk
Datasheet:
IPB80N03S4L-03ATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPB80N03S4L-03ATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:f62bcea93691757a98ebc71a7b6990f8
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:17a4dbfb452cb7ea8d3b933494737fb1
Vgs(th) (Max) @ Id:8d1349aeb748691a40588148793fe2c6
Gate Charge (Qg) (Max) @ Vgs:4654abfef5e6b00713567f19e88c7a76
Vgs (Max):7e789298058bfb7cfeeb61a9dcda2972
Input Capacitance (Ciss) (Max) @ Vds:e89e261765246ca98ac0aed74acb7461
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):570b43b1a943317386ae8969270b009f
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:afb9c15c17fc8949a6d324bf8af9be28
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 10000
Stock:
10000 Can Ship Immediately
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