IPB80N06S209ATMA1

IPB80N06S209ATMA1

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IPB80N06S209ATMA1
Описание:
MOSFET N-CH 55V 80A TO263-3
Упаковка:
Tape & Reel (TR)
Datasheet:
IPB80N06S209ATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPB80N06S209ATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:ccbd814be8d73616679e7f5a64ce1cee
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):2f23d6284d881f9576110d827b42bb45
Current - Continuous Drain (Id) @ 25°C:f62bcea93691757a98ebc71a7b6990f8
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:ff090bd4d9469b0d0e4ded0a3556e1dc
Vgs(th) (Max) @ Id:c85cf4e3d57b0b7ecca2843fb481b878
Gate Charge (Qg) (Max) @ Vgs:92c10d9198fcdfeb3996f06b53375ee7
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:98f6a81a97f9bbcce83a4e360c1799de
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):97cc2010278dae29e0754abe60f0d639
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:afb9c15c17fc8949a6d324bf8af9be28
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 2000
Stock:
2000 Can Ship Immediately
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