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See Product Specifications
| номер части: | IPB80N06S4L05ATMA2 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Infineon Technologies |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 5568a11e95c42251b4839598cb5b4518 |
| Current - Continuous Drain (Id) @ 25°C: | f62bcea93691757a98ebc71a7b6990f8 |
| Drive Voltage (Max Rds On, Min Rds On): | 214881f189d1d05281deda79f8c1bf77 |
| Rds On (Max) @ Id, Vgs: | 8797fbeded8fc30620efe3cb78a8692f |
| Vgs(th) (Max) @ Id: | 6dd7c0f1a7703c7af46cda3922dc9c6b |
| Gate Charge (Qg) (Max) @ Vgs: | dd1e01f8f7a1df3b99f0374250edc868 |
| Vgs (Max): | 7e789298058bfb7cfeeb61a9dcda2972 |
| Input Capacitance (Ciss) (Max) @ Vds: | 8809b6573dc15ea88ceaacf6bd435bf0 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | eab462c69b290ca6c30caf291e93b8e7 |
| Operating Temperature: | 57d4d9eedc2deb0e981150db4dec7a0a |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | afb9c15c17fc8949a6d324bf8af9be28 |
| Package / Case: | 99446f4470b43888d0c78d7d2cdfc956 |
