IPB80N06S4L07ATMA1

IPB80N06S4L07ATMA1

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IPB80N06S4L07ATMA1
Описание:
MOSFET N-CH 60V 80A TO263-3
Упаковка:
Tape & Reel (TR)
Datasheet:
IPB80N06S4L07ATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPB80N06S4L07ATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:ccbd814be8d73616679e7f5a64ce1cee
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:f62bcea93691757a98ebc71a7b6990f8
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:1dfad2130b3f1ffc02f644f4bb171447
Vgs(th) (Max) @ Id:18e67f5e90b0080732efbfb1f1ecf2b0
Gate Charge (Qg) (Max) @ Vgs:4654abfef5e6b00713567f19e88c7a76
Vgs (Max):7e789298058bfb7cfeeb61a9dcda2972
Input Capacitance (Ciss) (Max) @ Vds:e75024e5d03f46e5b9c1c3cabf2bbb2f
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):c2695bd87197b90c9094095e9837d774
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:afb9c15c17fc8949a6d324bf8af9be28
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 0
Stock:
0 Can Ship Immediately
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