IPBE65R190CFD7AATMA1

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See Product Specifications

Mfr. #:

Mfr.:

Infineon Technologies

Описание:

MOSFET N-CH 650V 14A TO263-7

Упаковка:

Tape & Reel (TR)

Datasheet:

IPBE65R190CFD7AATMA1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	IPBE65R190CFD7AATMA1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Infineon Technologies
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:	c41948a95780bdf58d7eb2a34dbc26cd
Drive Voltage (Max Rds On, Min Rds On):	336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:	5efaa2c343e3931b0fdd1878315765e3
Vgs(th) (Max) @ Id:	01fcdd26178f989a3f4ae492b2a2e3ad
Gate Charge (Qg) (Max) @ Vgs:	9c776809f0ec6511de1829648c094927
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	5109f3bd3c0a01502161a0b9cc0db01c
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	3f7809d35872f764e8723f2f560517ed
Operating Temperature:	2bfdfc036647708637c6c2b106628aeb
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	ebdbb7474605d63165ba3ef504d98f65
Package / Case:	f0141ac7a209283a1eeaae764566c410