IPBE65R230CFD7AATMA1

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See Product Specifications

Mfr. #:

Mfr.:

Infineon Technologies

Описание:

MOSFET N-CH 650V 11A TO263-7

Упаковка:

Tape & Reel (TR)

Datasheet:

IPBE65R230CFD7AATMA1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	IPBE65R230CFD7AATMA1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Infineon Technologies
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:	339da39144bec9f61f0945ae3ef8f55e
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	639868820765d54785b4ce30a0f1a55d
Vgs(th) (Max) @ Id:	a7dee82b3b81c97d7098002a4a61d1e7
Gate Charge (Qg) (Max) @ Vgs:	972213b4ff98b73fb67879667322f035
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	c1f8c173065ba2584ada4170104d0728
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	c536ccddca9c99653f1af1372ed95f08
Operating Temperature:	2bfdfc036647708637c6c2b106628aeb
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	70cfa556a7bfa2b6e0562ccc6119329f
Package / Case:	a4f12035e6fae6f4bcd7a42fc3d1dd38