IPC100N04S5L1R9ATMA1

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See Product Specifications

Mfr. #:

Mfr.:

Infineon Technologies

Описание:

MOSFET N-CH 40V 100A 8TDSON-34

Упаковка:

Tape & Reel (TR)

Datasheet:

IPC100N04S5L1R9ATMA1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	IPC100N04S5L1R9ATMA1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Infineon Technologies
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	628cbc3e45d5bacb32414a526acf56ef
Current - Continuous Drain (Id) @ 25°C:	4cd988b83fc990b9e8358853bdd4f330
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	f8f035b9f4ec5d044340b5c7f8c5320e
Vgs(th) (Max) @ Id:	245c451c55e7a1df3f779f9ec4983bb3
Gate Charge (Qg) (Max) @ Vgs:	a8f2dfe42ba6bc9b128a04bc4c409c13
Vgs (Max):	7e789298058bfb7cfeeb61a9dcda2972
Input Capacitance (Ciss) (Max) @ Vds:	a08102f4fde496751212dcee1b24c177
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	b1b9c7ff3bcb5642e62edfb8c3bca1bc
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	53977c34886707d3b8952fb7637a26f4
Package / Case:	7f82de9f5c66f9f803bc2f6ee2b90c1b