IPD068N10N3GBTMA1

IPD068N10N3GBTMA1

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IPD068N10N3GBTMA1
Описание:
MOSFET N-CH 100V 90A TO252-3
Упаковка:
Tape & Reel (TR)
Datasheet:
IPD068N10N3GBTMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPD068N10N3GBTMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:6be4e6132ce6fe4869791c52f9706959
Drive Voltage (Max Rds On, Min Rds On):9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:248b26ea1d5593e3edbb858011b2d3da
Vgs(th) (Max) @ Id:778cdb6754e16153c1d8c8b557a2ff1b
Gate Charge (Qg) (Max) @ Vgs:c2a047afd608a5b72d4963a3d3ebdf16
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:1139e338f82122e622401b2aac9f7935
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):3b4979fdef3ecbb1da8880119fdf6552
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:156b239f1b5a9e37e450db4c47891372
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
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