IPD06N03LB G

IPD06N03LB G

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IPD06N03LB G
Описание:
MOSFET N-CH 30V 50A TO252-3
Упаковка:
Tape & Reel (TR)
Datasheet:
IPD06N03LB G Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPD06N03LB G
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:de6fb719240c75cb73005d80d2170f88
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:8f45701c63b2d946b6860dd98bf057cf
Vgs(th) (Max) @ Id:ca85c5cd8a2c1a1a8962a77a161e6080
Gate Charge (Qg) (Max) @ Vgs:105e5a75dca0fa81aaf5f8f269b54c9d
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:bd7d57a5ba7de0e826e84e8d0fe9c54f
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):35e259c9e67ff8fd40b9e992f041f118
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:99c051db1f655d81273583e9b51421cf
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
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