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See Product Specifications
| номер части: | IPD082N10N3GBTMA1 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Infineon Technologies |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 227b5c7c7a2ed2ea3da210ed0860030d |
| Current - Continuous Drain (Id) @ 25°C: | f62bcea93691757a98ebc71a7b6990f8 |
| Drive Voltage (Max Rds On, Min Rds On): | 9271e32297e2bbc49bb4aadcd764fb6f |
| Rds On (Max) @ Id, Vgs: | e04e07200a329d6155936ccf9bb6ac99 |
| Vgs(th) (Max) @ Id: | 39aff4c70904287b239b0604a9c5750e |
| Gate Charge (Qg) (Max) @ Vgs: | 88e0a1d425c24accd6c4e93ab921d440 |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 90b3bc12bc87ee666c25249d402c267a |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 9ab21596dbbd1fdf7a3f4aba0a4832ee |
| Operating Temperature: | 57d4d9eedc2deb0e981150db4dec7a0a |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 156b239f1b5a9e37e450db4c47891372 |
| Package / Case: | d6d5b809beb9f171e5b4097664b4dd95 |
