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See Product Specifications
| номер части: | IPD122N10N3GBTMA1 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Infineon Technologies |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 227b5c7c7a2ed2ea3da210ed0860030d |
| Current - Continuous Drain (Id) @ 25°C: | bead6badf1c812f77be65f27437d1a94 |
| Drive Voltage (Max Rds On, Min Rds On): | 9271e32297e2bbc49bb4aadcd764fb6f |
| Rds On (Max) @ Id, Vgs: | 688658f1a8668276ef12f38c7b2689d0 |
| Vgs(th) (Max) @ Id: | 2fe77f1dbc1d2d9307e3fa879d26ce2f |
| Gate Charge (Qg) (Max) @ Vgs: | c4c0c60e6988bb99695980ffd0c06910 |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | c426f391ee6caee9eaaad070f1d2e67d |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 570b43b1a943317386ae8969270b009f |
| Operating Temperature: | 57d4d9eedc2deb0e981150db4dec7a0a |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 156b239f1b5a9e37e450db4c47891372 |
| Package / Case: | d6d5b809beb9f171e5b4097664b4dd95 |
