IPD30N06S4L23ATMA1

IPD30N06S4L23ATMA1

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IPD30N06S4L23ATMA1
Описание:
MOSFET N-CH 60V 30A TO252-3
Упаковка:
Tape & Reel (TR)
Datasheet:
IPD30N06S4L23ATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPD30N06S4L23ATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:ccbd814be8d73616679e7f5a64ce1cee
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:b5a4f17035c9cf549f5adf4038dff86d
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:e6b1cccc07ab6cf5135aa699955e5898
Vgs(th) (Max) @ Id:b04214a0d814cfe799d859780cb3a8af
Gate Charge (Qg) (Max) @ Vgs:82b113cefa8bdd5383fff44f641f8fc1
Vgs (Max):7e789298058bfb7cfeeb61a9dcda2972
Input Capacitance (Ciss) (Max) @ Vds:a4a458ddb2cdbb5b6f04a6c85adf6ee2
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):27cc3bf8eca6e148f3a5d1e543db0f2e
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:99c051db1f655d81273583e9b51421cf
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
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