IPD320N20N3GBTMA1

IPD320N20N3GBTMA1

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IPD320N20N3GBTMA1
Описание:
MOSFET N-CH 200V 34A TO252-3
Упаковка:
Tape & Reel (TR)
Datasheet:
IPD320N20N3GBTMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPD320N20N3GBTMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):b86aa01bc1f9484a191794819edcfc06
Current - Continuous Drain (Id) @ 25°C:59e6fc9ea45d689c2809c4d653f1b606
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:afa588e2f55a206f12080c740fb1c6ea
Vgs(th) (Max) @ Id:7ab71f6838d5d470ed7a1149e3b50b1e
Gate Charge (Qg) (Max) @ Vgs:adefee2be820ef0364f2851d0e700f1e
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:669fff702ed85e9fd02416732435f9b6
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):35f3eecaa3bd22ad34ab7c60509c09d1
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:156b239f1b5a9e37e450db4c47891372
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
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